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| Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 150 V ID25 = 67 A RDS(on)= 28 mW trr 250ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C (MOSFET chip capability) External lead (current limit) TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C Maximum Ratings 150 150 20 30 67 280 70 70 30 1.0 5 250 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W C C C C V~ g ISOPLUS 247TM E153432 Isolated backside* G = Gate D = Drain S = Source * Patent pending Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low drain to tab capacitance(<30pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Rated for Unclamped Inductive Load Switching (UIS) * Fast intrinsic Rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control Advantages * Easy assembly * Space savings * High power density 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 150 2.0 V 4.0 V 100 nA TJ = 25C TJ = 125C 25 mA 750 mA 28 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250mA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 IXYS reserves the right to change limits, test conditions, and dimensions. 98714 (03/27/00) (c) 2000 IXYS All rights reserved 1-2 IXFR 70N15 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Notes 2, 3 30 45 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 1080 360 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1 W (External), Notes 2, 3 52 70 23 180 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT Notes 2, 3 28 92 0.5 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 (IXFR) OUTLINE gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Note 1 IF = IT, VGS = 0 V, Notes 2, 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 70 280 1.5 250 A A V ns mC A IF = 50A,-di/dt = 100 A/ms, VR = 100 V 0.85 8 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle d 2 % 3. IT = 35A (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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